Thin films of high-k dysprosium scandate prepared by metal organic chemical vapor deposition for metal-insulator-metal capacitor applications

Solid State Communications

Volumn 147, Issue 7-8, 2008, Pages 332-335

  Thomas, R ^a   Saavedra Arias, J J ^a   Karan, N K ^a   Murari, N M ^a   Katiyar, R S ^a   Ehrhart, P ^b   Waser, R ^b  

^a UNIVERSITY OF PUERTO RICO   (Puerto Rico)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

A. Insulators; A. Thin film; B. Nanofabrication; C. Dielectric response

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC CURRENTS; ENERGY STORAGE; METAL INSULATOR BOUNDARIES; METALLIZING; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; ORGANOMETALLICS; THICK FILMS;

METAL-INSULATOR-METAL (M-I-M) CAPACITORS; METAL-ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD); SCANDATE;

ION BEAM ASSISTED DEPOSITION;

EID: 46849105255     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2008.05.014     Document Type: Article

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