Memory characteristics of Au nanocrystals embedded in metal-oxide- semiconductor structure by using atomic-layer-deposited Al2O 3 as control oxide

Journal of Physics D: Applied Physics

Volumn 40, Issue 6, 2007, Pages 1673-1677

  Wang, Chen Chan ^a   Chiou, Yan Kai ^a   Chang, Che Hao ^a   Tseng, Jiun Yi ^a   Wu, Lin Jung ^a   Chen, Chun Yu ^a   Wu, Tai Bor ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ATOMIC LAYER DEPOSITION; GOLD; HYSTERESIS LOOPS; LEAKAGE CURRENTS; MOS CAPACITORS; ROM;

CAPACITANCE VOLTAGE HYSTERESIS; FLOATING GATES; TURN AROUND VOLTAGE;

NANOCRYSTALS;

EID: 33947613083     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/40/6/016     Document Type: Article

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