Impact of nitridation on structural and optical properties of MOVPE-grown m-plane GaN layers on LiAlO2

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue SUPPL. 2, 2009, Pages

  Mauder, C ^a   Rahimzadeh Khoshroo, L ^a   Behmenburg, H ^a   Reuters, B ^a   Bosing M ^a   Rzheutskii, M V ^b   Lutsenko, E V ^b   Yablonskii, G P ^b   Woitok, J F ^c   Chou, M M C ^d   Heuken, M ^a,e   Kalisch, H ^a   Jansen, R H ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b B I STEPANOV INSTITUTE OF PHYSICS   (Belarus)

^c MALVERN INSTRUMENTS LTD   (United Kingdom)

^d NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^e AIXTRON AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND-EDGE EMISSION INTENSITY; BENEFICIAL EFFECTS; DEPOSITED LAYER; GAN FILM; GAN LAYERS; HIGH QUALITY; IN-SITU; M-PLANE; METAL-ORGANIC VAPOUR PHASE EPITAXY; MOVPE; NITRIDATION PROCESS; ORDERS OF MAGNITUDE; PRE-TREATMENT; ROOM TEMPERATURE; ROOT MEAN SQUARE ROUGHNESS; SIGNIFICANT IMPACTS; STRUCTURAL AND OPTICAL PROPERTIES; SUBSTRATE PRETREATMENT; SUBSTRATE SURFACE; SURFACE COMPOSITIONS; THIN-FILM DEPOSITIONS; X RAY ROCKING CURVE;

DEPOSITION; GALLIUM NITRIDE; LITHIUM ALLOYS; NITRIDATION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE SPECTROSCOPY; SUBSTRATES;

GALLIUM ALLOYS;

EID: 77953487383     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200880790     Document Type: Article

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