Influence of growth temperature on emission efficiency of InGaN/GaN multiple quantum wells

Materials Research Society Symposium - Proceedings

Volumn 693, Issue , 2002, Pages 377-382

  Chen, Fei ^a   Cartwright, A N ^a   Sweeney, Paul M ^a   Cheung, M C ^a   Flynn, Jeffrey S ^a   Keogh, David ^a  

^a State University of New York   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LIGHT EMISSION; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; TEMPERATURE;

INDIUM GALLIUM NITRIDE; PHOTOLUMINESCENCE SPECTROSCOPY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0036375835     PISSN: 02729172     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (13)