Alignment of semiconductor nanowires using ion beams

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Volumn 5, Issue 22, 2009, Pages 2576-2580

  Borschel, Christian ^a   Niepelt, Raphael ^a   Geburt, Sebastian ^a   Gutsche, Christoph ^b   Regolin, Ingo ^b   Prost, Werner ^b   Tegude, Franz Josef ^b   Stichtenoth, Daniel ^c   Schwen, Daniel ^d   Ronning, Carsten ^a  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

^b UNIVERSITY OF DUISBURG ESSEN   (Germany)

^c UNIVERSITY OF GÖTTINGEN   (Germany)

^d University of Illinois at Urbana Champaign   (United States)

Author keywords

Alignment; Ion beams; Irradiation; Nanowires

Indexed keywords

DEFECT FORMATION; ENERGETIC ION; EPITAXIAL RELATIONS; FLUENCES; GAAS SUBSTRATES; INTERSTITIALS; ION FLUENCES; ION SPECIES; MONTE CARLO SIMULATION; SEMICONDUCTOR NANOWIRE; STRAIGHT NANOWIRES; SUBSTRATE SURFACE;

ALIGNMENT; BEAM PLASMA INTERACTIONS; COMPUTER SIMULATION; GALLIUM ALLOYS; GALLIUM ARSENIDE; ION BEAMS; ION BOMBARDMENT; IONS; MONTE CARLO METHODS; SUBSTRATES;

NANOWIRES;

GALLIUM; GALLIUM ARSENIDE; ION; NANOTUBE; ORGANOARSENIC DERIVATIVE;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; MACROMOLECULE; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; RADIATION EXPOSURE; SEMICONDUCTOR; SURFACE PROPERTY; ULTRASTRUCTURE;

ARSENICALS; CRYSTALLIZATION; GALLIUM; IONS; MACROMOLECULAR SUBSTANCES; MOLECULAR CONFORMATION; NANOTECHNOLOGY; NANOTUBES; PARTICLE SIZE; SEMICONDUCTORS; SURFACE PROPERTIES;

EID: 73349114647     PISSN: 16136810     EISSN: 16136829     Source Type: Journal    
DOI: 10.1002/smll.200900562     Document Type: Article

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