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Applied Physics Letters

Volumn 98, Issue 4, 2011, Pages

Epitaxial growth of lanthanide oxides La2O3 and Sc2O3 on GaN

(5) Jur, Jesse S a Wheeler, Virginia D a Lichtenwalner, Daniel J a Maria, Jon Paul a Johnson, Mark A L a

a North Carolina State University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT CONDITIONS; BIXBYITE; CAPPING LAYER; CRYSTAL QUALITIES; INTERFACE QUALITY; INTERFACIAL LAYER; LANTHANIDE OXIDE; MIXED PHASE;

EPITAXIAL FILMS; EPITAXIAL GROWTH; FILM GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; RARE EARTH ELEMENTS; SCANDIUM;

LATTICE MISMATCH;

EID: 79551635689 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3541883 Document Type: Article

Times cited : (21)

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