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Volumn 1068, Issue , 2008, Pages 63-68

Epitaxial growth of high-k dielectrics for GaN MOSFETs

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; DIELECTRIC MATERIALS; ENERGY GAP; GALLIUM ARSENIDE; GALLIUM NITRIDE; HETEROJUNCTIONS; HIGH-K DIELECTRIC; III-V SEMICONDUCTORS; JUNCTION GATE FIELD EFFECT TRANSISTORS; LATTICE MISMATCH; METALS; MOLECULAR BEAM EPITAXY; MOS DEVICES; OXIDE SEMICONDUCTORS; POWER MOSFET; RARE EARTHS; SAPPHIRE; SEMICONDUCTING GALLIUM; SILICON ALLOYS; SILICON CARBIDE; SUBSTRATES; TRANSISTORS; WIDE BAND GAP SEMICONDUCTORS;

EID: 57649105049     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-1068-c08-02     Document Type: Conference Paper
Times cited : (2)

References (14)
  • 3
    • 57649098297 scopus 로고    scopus 로고
    • J. Robertson and B. Falabretti, Journal of Applied Physics, 100, pp. -, 2006.
    • J. Robertson and B. Falabretti, Journal of Applied Physics, vol. 100, pp. -, 2006.
  • 14
    • 15844392689 scopus 로고    scopus 로고
    • 1 ed. Chichester, West Sussex, England: John Wiley and Sons
    • H. J. Scheel and T. Fukuda, Crystal Growth Technology, 1 ed. Chichester, West Sussex, England: John Wiley and Sons, 2003.
    • (2003) Crystal Growth Technology
    • Scheel, H.J.1    Fukuda, T.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.