Epitaxial growth of Sc2 O3 films on GaN (0001) by pulsed laser deposition

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 3, 2007, Pages 754-759

  Liu, Chang ^a   Chor, Eng Fong ^a   Tan, Leng Seow ^a   Du, Anyan ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; EPITAXIAL GROWTH; EXCIMER LASERS; PULSED LASER DEPOSITION; SCANDIUM COMPOUNDS; STOICHIOMETRY; SUBSTRATES;

FILM CRYSTALLINITY; OXYGEN PARTIAL PRESSURE; SUBSTRATE TEMPERATURE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 34249868436     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2731332     Document Type: Article

References (25)

1. M. A. Khan, X. Hu, G. Simin, A. Lunev, J. Yang, R. Gaska, and M. S. Shur, IEEE Electron Device Lett. 21, 63 (2000).
2. B. P. Gila, et al., Phys. Status Solidi A 188, 239 (2001).
3. T. Hashizume, S. Ootomo, T. Inagaki, and H. Hasegawa, J. Vac. Sci. Technol. B 21, 1828 (2003).
4. C. Liu, E. F. Chor, and L. S. Tan, Appl. Phys. Lett. 88, 173504 (2006).
5. D. O. Klenov, L. F. Edge, D. G. Schlom, and S. Stemmer, Appl. Phys. Lett. 86, 051901 (2005).
6. R. Mehandru, et al., Appl. Phys. Lett. 82, 2530 (2003).
7. B. S. Kang, et al., Appl. Phys. Lett. 84, 4635 (2004).
8. V. N. Abramov, A. N. Ermoshkin, and A. I. Kuznetsov, Sov. Phys. Solid State 25, 981 (1983).
9. H. H. Tippins, J. Phys. Chem. Solids 27, 1069 (1966).
10. R. D. Shannon, J. Appl. Phys. 73, 348 (1993).
11. Y. W. Zhang, J. H. Liu, R. Si, Z. G. Yan, and C. H. Yan, J. Phys. Chem. B 109, 18324 (2005).
12. J. G. Li, T. Ikegami, and T. Mori, J. Am. Ceram. Soc. 88, 817 (2005).
13. D. B. Chrisey and G. K. Hubler, Pulsed Laser Deposition of Thin Films (Wiley, New York, 1994).
14. R. Ryu, S. Zhu, J. D. Budai, H. R. Chandrasekhar, P. F. Miceli, and H. W. White, J. Appl. Phys. 88, 201 (2000).
15. G. Reiße, B. Keiper, S. Weißmantel, M. Johansen, R. Scholz, and T. Martini, Thin Solid Films 241, 119 (1994).
16. C. Liu, E. F. Chor, L. S. Tan, and Y. Dong, Appl. Phys. Lett. 88, 222113 (2006).
17. M. Tabbal, P. Merel, M. Chaker, and H. Pepin, Eur. Phys. J.: Appl. Phys. 14, 115 (2001).
18. M. Harris, H. Macleod, S. Ogura, E. Pelletier, and B. Vidal, Thin Solid Films 57, 173 (1979).
19. S. Zhang and R. Xiao, J. Appl. Phys. 83, 3842 (1998).
20. R. J. Gaboriaud, F. Pailloux, and F. Paumier, Appl. Surf. Sci. 188, 29 (2002).
21. A. Dimoulas, A. Tralos, G. Vellianitis, N. Boukos, and K. Argyropoulos, J. Appl. Phys. 90, 4224 (2001).
22. S. L. Jones, D. Kumar, R. K. Singh, and P. H. Holloway, Appl. Phys. Lett. 71, 404 (1997).
23. J. M. Hvam, Solid State Commun. 27, 1347 (1978).
24. M. Kumar, R. M. Mehra, A. Wakahara, M. Ishida, and A. Yoshida, Thin Solid Films 484, 174 (2005).
25. S. Boughaba and M. U. Islam, Mater. Res. Soc. Symp. Proc. 617, J3.7.1 (2000).