Relation between enhancement in growth and thickness-dependent crystallization in ALD Ti O2 thin films

Journal of the Electrochemical Society

Volumn 158, Issue 1, 2011, Pages

  Kim, Seong Keun ^a,b   Hoffmann Eifert, Susanne ^a   Reiners, Marcel ^a   Waser, Rainer ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS STRUCTURES; CRITICAL FILM THICKNESS; CRITICAL THICKNESS; CRYSTALLIZATION PROCESS; CRYSTALLIZED FILMS; HYDROXYL GROUPS; POLYCRYSTALLINE STRUCTURE; REACTION SURFACES; SURFACE-ROUGHENING; SUSCEPTOR TEMPERATURE; THIN AMORPHOUS FILMS;

ATOMIC LAYER DEPOSITION; CRYSTALLIZATION; GROWTH RATE; SURFACE REACTIONS;

AMORPHOUS FILMS;

EID: 79551630373     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3507258     Document Type: Article

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