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Volumn 31, Issue 1, 2011, Pages 189-203

Interaction mechanisms between Ar-O 2 Post-discharge and stearic acid I: Behaviour of thin films

(9) Bernardelli, E A a,b Belmonte, T a Duday, D c Frache, G c Poncin Epaillard, F d Noel C a Choquet, P c Migeon, H N c Maliska, A b

a INSTITUT JEAN LAMOUR (France)

b FEDERAL UNIVERSITY OF SANTA CATARINA (Brazil)

c LUXEMBOURG INSTITUTE OF SCIENCE AND TECHNOLOGY (Luxembourg)

d UNIVERSITÉ DU MAINE (France)

Author keywords

Plasma cleaning; Post discharge; Stearic acid

Indexed keywords

AFTER-TREATMENT; ALIPHATIC CHAINS; ATOMIC OXYGEN; BRANCHING RATIO; C-C BONDS; CLEAN SURFACES; DE-WETTING; END GROUPS; FUNCTION OF TIME; FUNCTIONALIZATIONS; HOMOGENEOUS FILMS; HYDROPEROXIDES; INTERACTION MECHANISMS; ISOLATED ISLANDS; OH GROUP; PLASMA CLEANING; POST-DISCHARGE; TEMPERATURE RISE; TREATMENT TIME;

CARBOXYLIC ACIDS; DROP FORMATION; FUNCTIONAL GROUPS; GRAFTING (CHEMICAL); OXIDATION; OXYGEN; STEARIC ACID; SURFACE PHENOMENA; SURFACE TREATMENT; THIN FILMS;

ELECTRIC DISCHARGES;

EID: 79551550428 PISSN: 02724324 EISSN: None Source Type: Journal
DOI: 10.1007/s11090-010-9263-2 Document Type: Article

Times cited : (28)

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