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Volumn 6, Issue SUPPL. 1, 2009, Pages

Interaction of stearic acid deposited on silicon samples with Ar/N 2and Ar/O2 atmospheric pressure microwave post-discharges

(6) Noël, Cédric a,b Duday, David b Verdier, Stéphane c Choquet, Patrick b Belmonte, Thierry a Migeon, Henri Noël b

a INSTITUT JEAN LAMOUR (France)

b LUXEMBOURG INSTITUTE OF SCIENCE AND TECHNOLOGY (Luxembourg)

c Novelis Foil Innovation Centre (Luxembourg)

Author keywords

Afterglow plasma processes; Etching; Microwave discharges; Plasma treatment; Surface modification

Indexed keywords

AFTERGLOW PLASMA PROCESS; AFTERGLOW PLASMA PROCESSES; MICROWAVE DISCHARGE; PLASMA TREATMENT; SURFACE MODIFICATION;

ACIDS; ANGLE MEASUREMENT; ATMOSPHERIC PRESSURE; CONTACT ANGLE; ETCHING; MICROWAVES; PLASMA APPLICATIONS; PLASMAS; SECONDARY ION MASS SPECTROMETRY; STEARIC ACID; SURFACE ANALYSIS;

SURFACE DISCHARGES;

EID: 77954912460 PISSN: 16128850 EISSN: 16128869 Source Type: Journal
DOI: 10.1002/ppap.200930506 Document Type: Conference Paper

Times cited : (8)

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