Hydrogen sensors using nitride-based semiconductor diodes: The role of metal/semiconductor interfaces

Sensors

Volumn 11, Issue 1, 2011, Pages 674-695

  Irokawa, Yoshihiro ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

AlGaN; GaN; Hydrogen sensors; Schottky barrier diodes

Indexed keywords

EID: 79251640874     PISSN: 14248220     EISSN: None     Source Type: Journal    
DOI: 10.3390/s110100674     Document Type: Review

References (47)

1. Christofides, C.; Mandelis, A. Solid-state sensors for trace hydrogen gas detection. J. Appl. Phys. 1990, 68, R1-R30.
2. Pearton, S.J.; Ren, F.; Wang, Y.L; Chu, B.H.; Chen, K.H.; Chang, C.Y.; Lim, W.; Lin, J.; Norton, D.P. Recent advances in wide bandgap semiconductor biological and gas sensors. Progr. Mater. Sci. 2010, 55, 1-59.
3. Pearton, S.J.; Kang, B.S.; Kim, S.; Ren, F.; Gila, B.P.; Abernathy, C.R; Lin, J.; Chu, S.N.G. GaN-based diodes and transistors for chemical, gas, biological and pressure sensing. J. Phys. Condens. Matter 2004, 16, R961-R994.
4. Trinchi, A.; Kandasamy, S.; Wlodarski, W. High temperature field effect hydrogen and hydrocarbon gas sensors based on SiC MOS devices. Sens. Actuat. B 2008, 133, 705-716.
5. Soo, M.T.; Cheong, K.Y.; Noor, A.F.M. Advances of SiC-based MOS capacitor hydrogen sensors for harsh environment applications. Sens. Actuat. B 2010, 151, 39-55.
6. Schalwig, J.; Müller, G.; Karrer, U.; Eickhoff, M.; Ambacher, O.; Stutzmann, M.; Görgens, L.; Dollinger, G. Hydrogen response mechanism of Pt-GaN Schottky diodes. Appl. Phys. Lett. 2002, 80, 1222-1224.
7. Winzer, A.T.; Goldhahn, R.; Gobsch, G.; Dadgar, A.; Krost, A.; Weidemann, O.; Stutzmann, M.; Eickhoff, M. Electroreflectance spectroscopy of Pt/AlGaN/GaN heterostructures exposed to gaseous hydrogen. Appl. Phys. Lett. 2006, 88, 024101.
8. Lundström, I.; Sundgren, H.; Winquist, F.; Eriksson, M.; Rülcker, C.K.; Spetz, A.L. Twenty-five years of field effect gas sensor research in Linköping. Sens. Actuat. B 2007, 121, 247-262.
9. Lundström, I.; DiStefano, T. Influence of hydrogen on Pt-SiO2-Si structures. Solid State Commun. 1976, 19, 871-875.
10. Lundström, I.; Shivaraman, M.S.; Svensson, C. Chemical reactions on palladium surfaces studied with Pd-MOS structures. Surf. Sci. 1977, 64, 497-519.
11. Söderberg, D.; Lundtröm. I. Surface and interface dipoles on catalytic metal films. Solid State Commun. 1980, 35, 169-174.
12. Ekedahl, L.G.; Eriksson, M.; Lundström, I. Hydrogen sensing mechanisms of metal-insulator interfaces. Acc. Chem. Res. 1998, 31, 249-256.
13. Petty, M.C. Conduction mechanisms in Pd/SiO2/n-Si Schottky diode hydrogen detectors. Solid State Electron. 1986, 29, 89-97.
14. Nakamura, S.; Ohsono, T.; Takahashi, N.; Okumura, T. Kelvin-probe characterization of hydrogen-sensitive palladium/notride semiconductors contacts. In Proceedings of The 8th International Conference on Nitride Semiconductors, Jeju, Korea, 18-23 October 2009; Volume 1, pp. 6-7.
15. Weidemann, O.; Hermann, M.; Steinhoff, G.; Wingbrant, H.; A. Spetz, A.L.; Stutzmann, M.; Eickhoff, M. Influence of surface oxides on hydrogen-sensitive Pd:GaN Schottky diodes. Appl. Phys. Lett. 2003, 83, 773-775.
16. Kang, B.S.; Kim, S.; Ren, F.; Gila, B.P.; Abernathy, C.R.; Pearton, S.J. Comparison of MOS and Schottky W/Pt-GaN diodes for hydrogen detection. Sens. Actuat. B 2005, 104, 232-236.
17. Irokawa, Y.; Sakuma, Y.; Sekiguchi, T. Effect of dielectrics on hydrogen detection sensitivity of metal-insulator-semiconductor Pt-GaN diodes. Jpn. J. Appl. Phys. 2007, 46, 7714-7716.
18. Yan, J.T.; Lee, C.T. Improved detection sensitivity of Pt/β-Ga2O3/GaN hydrogen sensor diode. Sens. Actuat. B 2009, 143, 192-197.
19. Chiu, S.Y.; Huang, H.W.; Huang, T.H.; Liang, K.C.; Liu, K.P.; Tsai, J.H.; Lour, W.S. Comprehensive study of Pd/GaN metal-semiconductor-metal hydrogen sensors with symmetrically bi-directional sensing performance. Sens. Actuat. B 2009, 138, 422-427.
20. Chiu, S.Y.; Liang, K.C.; Huang, T.H.; Liu, K.P.; Huang, H.W.; Tsai, J.H.; Lour, W.S. GaN sensors with metal-oxide mixture for sensing hydrogen-containing gases of ultralow concentration. Jpn. J. Appl. Phys. 2009, 48, 041002.
21. Chang, C.F.; Tsai, T.H.; Chen, H.I.; Lin, K.W.; Chen, T.P.; Chen, L.Y.; Liu, Y.C.; Liu, W.C. Hydrogen sensing properties of a Pd/SiO2/AlGaN-based MOS diode. Electrochem. Commun. 2009, 11, 65-67.
22. Irokawa, Y. Hydrogen-induced change in the electrical properties of metal-insulator-semiconductor Pt-GaN diodes. J. Appl. Phys. 2010, 108, 094501.
23. Nakagomi, S.; Spetz, A.L.; Lundstrom, I.; Tobias, P. Electrical characterization of carbon monoxide sensitive high temperature sensor diode based on catalytic metal gate-insulator-silicon carbide structure. IEEE Sens. J. 2002, 2, 379-386.
24. Schalwig, J.; Müller, G.; Eickhoff, M.; Ambacher, O.; Stutzmann, M. Group III-nitride-based gas sensors for combustion monitoring. Mater. Sci. Eng. B 2002, 93, 207-214.
25. Oh, E.; Kim, B.; Park, H.; Park, Y. Effect of surface layer on optical properties of GaN and InxGa1-xN upon thermal annealing. Appl. Phys. Lett. 1998, 73, 1883-1885.
26. Matsuo, K.; Negoro, N.; Kotani, J.; Hashizume, T.; Hasegawa, H. Pt Schottky diode gas sensors formed on GaN and AlGaN/GaN heterostructure. Appl. Surf. Sci. 2005, 244, 273-276.
27. Schroder, D.K. Semiconductor Material and Device Characterization, 3rd ed.; Wiley: New York, NY, USA, 2006; pp. 728-730.
28. Kim, E.; Soejima, N.; Watanabe, Y.; Ishiko, M.; Kachi, T. Electrical Properties of Metal-Insulator-Semiconductor Capacitors on Freestanding GaN Substrate. Jpn. J. Appl. Phys. 2010, 49, 04DF08.
29. Robertson, J.; Falabretti, B. Band offsets of high K gate oxides on III-V semiconductors. J. Appl. Phys. 2006, 100, 014111.
30. Sze, S.M.; Ng, K.K. Physics of Semiconductor Devices, 3rd ed.; Wiley: New York, NY, USA, 2007; pp. 357-360.
31. Lowe, A.J.; Powell, M.J.; Elliott, S.R. The electronic properties of plasma-deposited films of hydrogenated amorphous SiNx (0 < x < 1.2). J. Appl. Phys. 1986, 59, 1251-1258.
32. Powell, M.J. Charge trapping instabilities in amorphous silicon-silicon nitride thin-film transistors. Appl. Phys. Lett. 1983, 43, 597-599.
33. Sze, S.M.; Ng, K.K. Physics of Semiconductor Devices, 3rd ed.; Wiley: New York, NY, USA, 2007; pp. 227-229.
34. Eriksson, M.; Salomonsson, A; Lundström, I; Briand, D.; Åbom, A.E. The influence of the insulator surface properties on the hydrogen response of field-effect gas sensors. J. Appl. Phys. 2005, 98, 034903.
35. Fogelberg, J.; Eriksson, M.; Dannetun, H.; Petersson, L.G. Kinetic modeling of hydrogen adsorption/absorption in thin films on hydrogen-sensitive field-effect devices: Observation of large hydrogen-induced dipoles at the Pd-SiO2 interface. J. Appl. Phys. 1995, 78, 988-996.
36. Kim, H.; Thompson, R.M.; Tilak, V.; Prunty, T.R.; Shealy, J.R.; Eastman, L.F. Effects of SiN passivation and high-electric field on AlGaN-GaN HFET degradation. IEEE Electron. Device Lett. 2003, 24, 421-423.
37. Irokawa, Y.; Matsuki, N.; Sumiya, M.; Sakuma, Y.; Sekiguchi, T.; Chikyo, T.; Sumida, Y.; Nakano, Y. Low-frequency capacitance-voltage study of hydrogen interaction with Pt-AlGaN/GaN Schottky barrier diodes. Phys. Status Solidi RRL 2009, 3, 266-268.
38. Hasegawa, H.; Akazawa, M. Mechanism and control of current transport in GaN and AlGaN Schottky barriers for chemical sensor applications. Appl. Surf. Sci. 2008, 254, 3653-3666.
39. Miyoshi, M.; Kuraoka, Y.; Asai, K.; Shibata, T.; Tanaka, M.; Egawa, T. Electrical characterization of Pt/AlGaN/GaN Schottky diodes grown using AlN template and their application to hydrogen gas sensors. J. Vac. Sci. Technol. 2007, B25, 1231-1235.
40. Hench, L.L.; West, J.K. Principles of Electronic Ceramics, 1st ed.; Wiley: New York, NY, USA, 1989; pp. 185-236.
41. Nicollian, E.H.; Brews, J.R. MOS (Metal Oxide Semiconductor) Physics and Technology, 1st ed.; Wiley: New York, NY, USA, 2003; pp. 423-491.
42. Pintilie, L.; Lisca, M.; Alexe, M. Polarization reversal and capacitance-voltage characteristic of epitaxial Pb(Zr,Ti)O3 layers. Appl. Phys. Lett. 2005, 86, 192902.
43. Wang, Y.L.; Ren, F.; Zhang, U.; Sun, Q.; Yerino, C.D.; Ko, T.S.; Cho, Y.S.; Lee, I.H.; Han, J.; Pearton, S.J. Improved hydrogen detection sensitivity in N-polar GaN Schottky diodes. Appl. Phys. Lett. 2009, 94, 212108.
44. Lo, C.F; Chang, C.Y; Chu, B.H.; Pearton, S.J.; Dabiran, A.; Chow, P.P.; Ren, F. Effect of humidity on hydrogen sensitivity of Pt-gated AlGaN/GaN high electron mobility transistor based sensors. Appl. Phys. Lett. 2010, 96, 232106.
45. Wang, Y.; Meyer, B.; Yin, X.; Kunat, M.; Langenberg, D.; Traeger, F.; Birkner, A.; Wöll, C. Hydrogen Induced Metallicity on the ZnO(10 0) Surface. Phys. Rev. Lett. 2005, 95, 266104.
46. Derycke, V.; Soukiassian, P.G.; Amy, F.; Chabal, Y.J.; D'angelo, M.D.; Enriquez, H.B.; Silly, M.G. Nanochemistry at the atomic scale revealed in hydrogen-induced semiconductor surface metallization. Nature Mater. 2003, 2, 253-258.
47. Hayashi, K.; Yamanaka, S.; Okushi, H.; Kajimura, K. Study of the effect of hydrogen on transport properties in chemical vapor deposited diamond films by Hall measurements. Appl. Phys. Lett. 1996, 68, 376-378.