Electrical characterization of PtAlGaNGaN Schottky diodes grown using AlN template and their application to hydrogen gas sensors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 4, 2007, Pages 1231-1235

  Miyoshi, Makoto ^a   Kuraoka, Yoshitaka ^a   Asai, Keiichiro ^a   Shibata, Tomohiko ^a,c   Tanaka, Mitsuhiro ^a   Egawa, Takashi ^b  

^a NGK INSULATORS LTD   (Japan)

^b NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

^c DOWA Electronics Materials Co Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; CHEMICAL SENSORS; ELECTRIC PROPERTIES; HYDROGEN; SAPPHIRE; SCHOTTKY BARRIER DIODES;

CURRENT TRANSPORT CHARACTERISTICS; IMPURITY LEVELS; LOW TEMPERATURE BUFFER LAYERS; SCHOTTKY BARRIER HEIGHT;

PLATINUM;

EID: 34547567599     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2749530     Document Type: Article

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