Electrical properties of metal-insulator-semiconductor capacitors on freestanding GaN substrate

Japanese Journal of Applied Physics

Volumn 49, Issue 4 PART 2, 2010, Pages

  Kim, Eunhee ^a   Soejima, Narumasa ^a   Watanabe, Yukihiko ^a   Ishiko, Masayasu ^a   Kachi, Tetsu ^a  

^a Rd Management Section   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; CAPACITANCE VOLTAGE; CURRENT VOLTAGE; ELECTRICAL PROPERTY; FREESTANDING GAN SUBSTRATES; HIGH RELIABILITY; HIGH VOLTAGE; INTERFACE QUALITY; INTERFACE TRAP DENSITY; METAL INSULATOR SEMICONDUCTOR CAPACITORS; MIS CAPACITORS; POWER DEVICES; ROOM TEMPERATURE; TIME-DEPENDENT DIELECTRIC BREAKDOWN;

CAPACITANCE; CAPACITORS; DIELECTRIC MATERIALS; GALLIUM NITRIDE; METAL INSULATOR BOUNDARIES; MIS DEVICES; SEMICONDUCTOR INSULATOR BOUNDARIES; SILICON NITRIDE;

GALLIUM ALLOYS;

EID: 77952692128     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.04DF08     Document Type: Article

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