Polarization reversal and capacitance-voltage characteristic of epitaxial Pb (Zr,Ti) O3 layers

Applied Physics Letters

Volumn 86, Issue 19, 2005, Pages 1-3

  Pintilie, L ^a   Lisca, M ^b   Alexe, M ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC POTENTIAL; ELECTRODES; ENERGY GAP; EPITAXIAL GROWTH; IONIZATION; NATURAL FREQUENCIES; POLARIZATION; THIN FILMS;

CAPACITANCE-VOLTAGE CHARACTERISTICS; CARRIER CONCENTRATIONS; COERCIVE VALUES; SCHOTTKY CONTACTS;

SEMICONDUCTING LEAD COMPOUNDS;

EID: 20844439382     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1926403     Document Type: Article

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