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Journal of Applied Physics

Volumn 108, Issue 9, 2010, Pages

Hydrogen-induced change in the electrical properties of metal-insulator-semiconductor Pt-GaN diodes

(1) Irokawa, Yoshihiro a

a NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

C-V CURVE; CAPACITANCE VOLTAGE; CONDUCTION MECHANISM; ELECTRICAL PROPERTY; FOWLER-NORDHEIM TUNNELING; HYDROGEN SENSITIVITY; METAL-INSULATOR-SEMICONDUCTORS; NEGATIVE BIAS; ROOM TEMPERATURE; SCHOTTKY; SHARP CONTRAST; WORK FUNCTION CHANGE;

ELECTRIC PROPERTIES; FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; GALLIUM NITRIDE; HYDROGEN; LAKES; METAL INSULATOR BOUNDARIES; MIS DEVICES; PLATINUM; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON COMPOUNDS;

SEMICONDUCTOR DIODES;

EID: 78649281991 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3496625 Document Type: Article

Times cited : (9)

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