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Volumn 11, Issue 1, 2011, Pages 876-885

Hall sensors for extreme temperatures

Author keywords

Extreme temperatures; Hall sensors; Magnetic sensors; N InSB GaAs

Indexed keywords


EID: 79251611127     PISSN: 14248220     EISSN: None     Source Type: Journal    
DOI: 10.3390/s110100876     Document Type: Article
Times cited : (50)

References (20)
  • 1
    • 0003660629 scopus 로고
    • Committee on Materials for High-Temperatures Semiconductors Devices, National Academy Press: Washington, DC, USA
    • Committee on Materials for High-Temperatures Semiconductors Devices. Materials for High-Temperatures Semiconductors Devices; National Academy Press: Washington, DC, USA, 1995.
    • (1995) Materials For High-Temperatures Semiconductors Devices
  • 7
    • 27344451094 scopus 로고    scopus 로고
    • High temperature electrical investigation of (Al,Ga)N/GaN heterostructures-Hall sensor applications. Phys. Stat
    • Consejo, C.; Contreras, S.; Konczewicz, L.; Lorenzini, P.; Cordier, Y.; Skierbiszewski, C.; Robert, J.L. High temperature electrical investigation of (Al,Ga)N/GaN heterostructures-Hall sensor applications. Phys. Stat. Sol. 2005, 2, 1438-1443.
    • (2005) Sol , vol.2 , pp. 1438-1443
    • Consejo, C.1    Contreras, S.2    Konczewicz, L.3    Lorenzini, P.4    Cordier, Y.5    Skierbiszewski, C.6    Robert, J.L.7
  • 8
    • 34547249269 scopus 로고    scopus 로고
    • High temperature dependence of the density of two-dimensional electron gas in Al0.18Ga0.82N/GaN heterostructures
    • Wang, M.J.; Shen, B.; Xu, F.J.; Wang, Y.; Xu, J.; Huang, S.; Yang, Z.J.; Xu, K.; Zhang, G.Y. High temperature dependence of the density of two-dimensional electron gas in Al0.18Ga0.82N/GaN heterostructures. Appl. Phys. A 2007, 88, 715-718.
    • (2007) Appl. Phys. A , vol.88 , pp. 715-718
    • Wang, M.J.1    Shen, B.2    Xu, F.J.3    Wang, Y.4    Xu, J.5    Huang, S.6    Yang, Z.J.7    Xu, K.8    Zhang, G.Y.9
  • 9
    • 33745282120 scopus 로고    scopus 로고
    • High temperature Hall effect sensors based on AlGaN/GaN heterojunctions
    • Lu, H.; Sandvik, P.; Vertiachikh, A.; Tucker, J.; Elasser, A. High temperature Hall effect sensors based on AlGaN/GaN heterojunctions. J. Appl. Phys. 2006, 99, 114510.
    • (2006) J. Appl. Phys , vol.99 , pp. 114510
    • Lu, H.1    Sandvik, P.2    Vertiachikh, A.3    Tucker, J.4    Elasser, A.5
  • 14
    • 33751237097 scopus 로고    scopus 로고
    • Hall sensors made of n-InSb/GaAs epitaxial layers for low temperature applications
    • Oszwaldowski, M.; Berus, T. Hall sensors made of n-InSb/GaAs epitaxial layers for low temperature applications. Thin Solid Films 2006, 515, 2692-2695.
    • (2006) Thin Solid Films , vol.515 , pp. 2692-2695
    • Oszwaldowski, M.1    Berus, T.2
  • 17
    • 33845617683 scopus 로고    scopus 로고
    • Temperature coefficients of Hall sensors made of InSb/GaAs epitaxial layers
    • Oszwaldowski, M.; Berus, T. Temperature coefficients of Hall sensors made of InSb/GaAs epitaxial layers. Sens. Actuat. A Phys. 2007, 133, 23-26.
    • (2007) Sens. Actuat. a Phys , vol.133 , pp. 23-26
    • Oszwaldowski, M.1    Berus, T.2
  • 18
    • 79251616515 scopus 로고    scopus 로고
    • Package for high-temperature Hall sensor (in Polish)
    • El-Ahmar, S.; Oszwaldowski, M. Package for high-temperature Hall sensor (in Polish). Elektronika 2009, 1, 72-74.
    • (2009) Elektronika , vol.1 , pp. 72-74
    • El-Ahmar, S.1    Oszwaldowski, M.2
  • 20
    • 4444329567 scopus 로고    scopus 로고
    • High quality hall sensors made of heavily doped n-InSb epitaxial films
    • Berus, T.; Oszwaldowski, M.; Grabowski, J. High quality hall sensors made of heavily doped n-InSb epitaxial films. Sens. Actuat. A Phys. 2004, 116, 75-78.
    • (2004) Sens. Actuat. a Phys , vol.116 , pp. 75-78
    • Berus, T.1    Oszwaldowski, M.2    Grabowski, J.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.