High quality Hall sensors made of heavily doped n-InSb epitaxial films

Sensors and Actuators, A: Physical

Volumn 116, Issue 1, 2004, Pages 75-78

  Berus, T ^a   Oszwaldowski, M ^a   Grabowski, J ^a  

^a POZNAN UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Epitaxial layers; Hall sensors; InSb

Indexed keywords

EPITAXIAL LAYERS; HALL SENSORS; INSB; TEMPERATURE COEFFICIENTS;

DOPING (ADDITIVES); EPITAXIAL GROWTH; HALL EFFECT; PARAMETER ESTIMATION; SENSITIVITY ANALYSIS; TEMPERATURE DISTRIBUTION;

SENSORS;

EID: 4444329567     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2004.03.029     Document Type: Article

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