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Volumn 2, Issue 4, 2005, Pages 1438-1443
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High temperature electrical investigations of (Al,Ga)N/GaN heterostructures - Hall sensor applications
b
CRHEA CNRS
(France)
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Author keywords
[No Author keywords available]
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Indexed keywords
APPROXIMATION THEORY;
ELECTRIC FIELD EFFECTS;
ELECTRON GAS;
HALL EFFECT;
HETEROJUNCTIONS;
POISSON EQUATION;
HALL SENSOR;
MAGNETIC FIELD SENSITIVITY;
RELAXATION TIME APPROXIMATION;
TWO-DIMENSIONAL ELECTRON GAZ CONCENTRATION (2DEG);
GALLIUM NITRIDE;
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EID: 27344451094
PISSN: 16101634
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1002/pssc.200460482 Document Type: Conference Paper |
Times cited : (14)
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References (15)
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