High temperature behaviour of AlGaN/AlN/GaN Hall-FET sensors

Materials Science and Engineering: B

Volumn 165, Issue 1-2, 2009, Pages 1-4

  Bouguen, L ^a,b   Konczewicz, L ^a,b   Contreras, S ^a,b   Jouault, B ^a,b   Camassel, J ^a,b   Cordier, Y ^c  

^a UNIVERSITÉ MONTPELLIER 2   (France)

^b CNRS   (France)

^c CRHEA CNRS   (France)

Author keywords

AlGaN heterostructures; Hall FET sensors; High temperature behaviour; Thermal drift

Indexed keywords

ALUMINUM ALLOYS; ALUMINUM GALLIUM NITRIDE; BUFFER LAYERS; CARRIER CONCENTRATION; DENSITY OF GASES; DETERIORATION; GALLIUM ALLOYS; GALLIUM NITRIDE; III-V SEMICONDUCTORS; SEMICONDUCTOR ALLOYS; TWO DIMENSIONAL ELECTRON GAS;

ALGAN HETEROSTRUCTURE; ALGAN/ALN/GAN; CONSTITUTIVE MATERIALS; HALL-FET SENSOR; HIGH TEMPERATURE BEHAVIOR; MATERIALS RESISTANCE; TEMPERATURE CYCLING; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE; THERMAL DRIFTS;

TEMPERATURE DISTRIBUTION;

EID: 72049107876     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2008.11.041     Document Type: Article

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