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Volumn 136, Issue 1, 2007, Pages 234-237

High temperature Hall sensors

Author keywords

Hall sensors; High temperatures; n InSb GaAs

Indexed keywords

CRYOGENICS; DOPING (ADDITIVES); EPITAXIAL GROWTH; GALLIUM COMPOUNDS; HIGH TEMPERATURE EFFECTS; INDIUM COMPOUNDS;

EID: 34247201090     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2006.11.023     Document Type: Article
Times cited : (13)

References (13)
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  • 2
    • 0032098760 scopus 로고    scopus 로고
    • Hall sensors based on heavily doped n-InSb thin films
    • Oszwaldowski M. Hall sensors based on heavily doped n-InSb thin films. Sens. Actuators A 68 (1998) 234-237
    • (1998) Sens. Actuators A , vol.68 , pp. 234-237
    • Oszwaldowski, M.1
  • 3
    • 4444329567 scopus 로고    scopus 로고
    • High quality Hall sensors made of heavy doped n-InSb epitaxial films
    • Berus T., Oszwaldowski M., and Grabowski J. High quality Hall sensors made of heavy doped n-InSb epitaxial films. Sens. Actuators A 116 1 (2004) 75
    • (2004) Sens. Actuators A , vol.116 , Issue.1 , pp. 75
    • Berus, T.1    Oszwaldowski, M.2    Grabowski, J.3
  • 4
    • 0037380417 scopus 로고    scopus 로고
    • Transport properties of Sn-doped InSb thin films and applications to Hall element
    • Okamoto A., and Shibasaki I. Transport properties of Sn-doped InSb thin films and applications to Hall element. J. Cryst. Growth 251 (2003) 560
    • (2003) J. Cryst. Growth , vol.251 , pp. 560
    • Okamoto, A.1    Shibasaki, I.2
  • 5
    • 33751237097 scopus 로고    scopus 로고
    • Hall sensors made of n-InSb/GaAs epitaxial layers for low temperature applications
    • Oszwaldowski M., and Berus T. Hall sensors made of n-InSb/GaAs epitaxial layers for low temperature applications. Thin Solid Films 515 (2006) 2692
    • (2006) Thin Solid Films , vol.515 , pp. 2692
    • Oszwaldowski, M.1    Berus, T.2
  • 6
    • 34247212270 scopus 로고    scopus 로고
    • Advanced Hall Sensors, http://www.ahsltd.com/.
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    • Honeywell Sensing and Control, http://content.honeywell.com/sensing/.
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    • 85052002270 scopus 로고    scopus 로고
    • Kirschman R. (Ed), John Wiley & Sons/IEEE Press
    • In: Kirschman R. (Ed). High-Temperature Electronics (1998/1999), John Wiley & Sons/IEEE Press
    • (1998) High-Temperature Electronics
  • 10
    • 34247201600 scopus 로고    scopus 로고
    • http://www.extremetemperatureelectronics.com/.
  • 11
    • 34247200007 scopus 로고    scopus 로고
    • http://fusionpower.org/.
  • 12
    • 0024666252 scopus 로고
    • Effect of tin doping on InSb thin films
    • Oszwaldowski M., and Berus T. Effect of tin doping on InSb thin films. Thin Solid Films 172 (1989) 71
    • (1989) Thin Solid Films , vol.172 , pp. 71
    • Oszwaldowski, M.1    Berus, T.2
  • 13
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    • Temperature coefficients of Hall sensors made of InSb/GaAs epitaxial layers
    • Oszwaldowski M., and Berus T. Temperature coefficients of Hall sensors made of InSb/GaAs epitaxial layers. Sens. Actuators A 133 1 (2006) 23
    • (2006) Sens. Actuators A , vol.133 , Issue.1 , pp. 23
    • Oszwaldowski, M.1    Berus, T.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.