Hall sensors made of n-InSb/GaAs epitaxial layers for low temperature applications

Thin Solid Films

Volumn 515, Issue 4, 2006, Pages 2692-2695

  Oszwaldowski, M ^a   Berus, T ^a  

^a POZNAN UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Detectors; Hall sensors; Indium antimonide; Magnetic properties

Indexed keywords

ELECTRIC RESISTANCE; EPITAXIAL GROWTH; GALLIUM COMPOUNDS; LOW TEMPERATURE EFFECTS; MAGNETIC PROPERTIES; SENSITIVITY ANALYSIS; SENSORS; THIN FILMS;

HALL SENSORS; HALL VOLTAGE; INDIUM ANTIMONIDE;

INDIUM COMPOUNDS;

EID: 33751237097     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.07.023     Document Type: Article

References (9)

1. Zawadzki W. Adv. Phys. 23 (1974) 435
2. Oszwaldowski M., and Zimpel M. J. Phys. Chem. Solids 49 (1988) 1179
3. Berus T., Oszwaldowski M., and Grabowski J. Sens. Actuators, A, Phys. 116 (2004) 75
4. Thompson P.E., Davis J.L., Waterman J., Wagner R.J., Gammon D., Gaskill D.K., and Stahlbush R. J. Appl. Phys. 60 (1991) 7166
5. Debnath M.C., Hang T., Roberts C., Cohen L.F., and Stradling R.A. J. Cryst. Growth 267 (2004) 17
6. Oszwaldowski M. Sens. Actuators, A, Phys. 68 (1998) 234
7. Mironov O.A., Myronov M., Durov S., Igumenov V.T., Konstantinov V.M., Paramonov V.V., Zhang T., and Cohen L.F. Physica E 20 (2004) 523
8. Beer A.C. Galvanomagnetic Effects in Semiconductors (1963), Academic Press, N.Y., London
9. Yano M., Takase T., and Kimata M. Phys. Status Solidi, A Appl. Res. 54 (1979) 707