Temperature coefficients of Hall sensors made of InSb/GaAs epitaxial layers

Sensors and Actuators, A: Physical

Volumn 133, Issue 1, 2007, Pages 23-26

  Oszwaldowski, M ^a   Berus, T ^a  

^a POZNAN UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Epitaxial layers; Hall sensors; InSb GaAs; Temperature coefficients

Indexed keywords

ELECTRIC POTENTIAL; ELECTRON MOBILITY; EPITAXIAL GROWTH; SEMICONDUCTING INDIUM COMPOUNDS; THIN FILMS;

EPITAXIAL LAYERS; HALL SENSORS; TEMPERATURE COEFFICIENTS;

SENSORS;

EID: 33845617683     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2006.03.037     Document Type: Article

References (5)

1. Berus T., Oszwaldowski M., and Grabowski J. High quality Hall sensors made of heavy doped n-InSb epitaxial films. Sens. Actuators A 116 (2004) 75-78
2. M. Oszwaldowski, T. Berus, Cryogenic Hall sensors made of n-InSb/GaAs epitaxial layers, 24th International Conference on Low Temperature Physiscs. AIP Conference Proceedings. Orlando, Florida, USA, August 10-17, in press.
3. Yano M., Takaseand T., and Kimała M. Heteroepitaxial InSb Films Grown by Molecular Beam Epitaxy. Phys. Status Solidi A 54 (1979) 707-713
4. Besikci C., Choi Y.H., Sudharsanan R., and Razeghi M. Anomalous Hall effect in InSb Layers grown by metalorganic chemical vapor deposition on GaAs substrates. J. Appl. Phys. 73 (1993) 5009-5013
5. Oszwaldowski M. Hall Sensors Based on Heavily Doped n-InSb Thin Films. Sen. Actuators A 68 (1998) 234-237