4H-SiC: A material for high temperature Hall sensor

Sensors and Actuators, A: Physical

Volumn 97-98, Issue , 2002, Pages 27-32

  Robert, Jean Louis ^a   Contreras, Sylvie ^a   Camassel, Jean ^a   Pernot, Julien ^a   Neyret, Eric ^a,b   Di Cioccio, Léa ^b   Billon, Thierry ^b  

^a CNRS   (France)

^b CEA LETI   (France)

Author keywords

4H SiC; Exhaustion regime; Hall sensor; High temperature

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY; HIGH TEMPERATURE PROPERTIES; MAGNETIC FIELDS; SEMICONDUCTING SILICON COMPOUNDS; TEMPERATURE;

EXHAUSTION REGIME; HALL SENSOR; LOW THERMAL DRIFT; TEMPERATURE SENSOR;

SENSORS;

EID: 0036544444     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(01)00812-3     Document Type: Conference Paper

References (10)

1. Large diameter, low defect silicon carbide Boule growth
2. Free electron density and mobility in high-quality 4H-SiC
3. Step-controlled epitaxial growth of SiC: High quality homoepitaxy
4. SiC in situ pre-growth etching: A thermodynamic study
5. Electric transport in n-type 4H-silicon carbide
6. Hall scattering factor and electron mobility of 4H-SiC: Measurements and numerical simulation
7. Extension of the collision-time tensor to the case of inelastic scattering mechanisms: Application to GaAs and GaN
8. Donor and acceptor concentration dependence of the electron Hall mobility and the Hall scattering factor in n-type 4H- and 6H-SiC
9. Capteur à effet Hall et/ou de température pour le domaine des hautes températures