High-quality Ge/Si0.4Ge0.6 multiple quantum wells for photonic applications: Growth by reduced pressure chemical vapour deposition and structural characteristics

Journal of Physics D: Applied Physics

Volumn 44, Issue 5, 2011, Pages

  Liu, Xue Chao ^a   Myronov, M ^a   Dobbie, A ^a   Morris, R J H ^a   Leadley, D R ^a  

^a UNIVERSITY OF WARWICK   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALED LAYERS; ANNEALING TEMPERATURES; AS-GROWN; ATOMIC REARRANGEMENTS; BARRIER LAYERS; HIGH QUALITY; HIGH TEMPERATURE; HIGH-RESOLUTION X-RAY DIFFRACTION; IN-SITU ANNEALING; INTER-DIFFUSION; INTERFACE QUALITY; LAYER COMPOSITION; MULTIPLE QUANTUM WELLS; OPTOELECTRONIC APPLICATIONS; PHOTONIC APPLICATION; PROCESSING TEMPERATURE; QUANTUM WELL LAYERS; REDUCED PRESSURE-CHEMICAL VAPOUR DEPOSITION; RMS ROUGHNESS; SECONDARY ION MASS SPECTROSCOPY; SMOOTH SURFACE; STRUCTURAL CHARACTERISTICS; THERMAL BUDGET; THERMAL STABILITY; ULTRA LOW ENERGY; VIRTUAL SUBSTRATES; XRD;

ANNEALING; ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; CRYSTAL ATOMIC STRUCTURE; GERMANIUM; PROCESSING; SECONDARY ION MASS SPECTROMETRY; SILICON WAFERS; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 79251544569     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/44/5/055102     Document Type: Article

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