Strain and Ge concentration determinations in SiGe/Si multiple quantum wells by transmission electron microscopy methods

Journal of Applied Physics

Volumn 93, Issue 7, 2003, Pages 3893-3899

  Benedetti, A ^a   Norris, D J ^a   Hetherington, C J D ^a   Cullis, A G ^a   Bobbins, D J ^b   Wallis, D J ^b  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b DEFENCE SCIENCE AND TECHNOLOGY LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPOSITION; ELECTRON ENERGY LOSS SPECTROSCOPY; ENERGY DISPERSIVE SPECTROSCOPY; EPITAXIAL GROWTH; HIGH RESOLUTION ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; STRAIN; TRANSMISSION ELECTRON MICROSCOPY;

STRAIN ENERGY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0037387435     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1558993     Document Type: Article

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