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Volumn 105, Issue 11, 2009, Pages

Ion yields and erosion rates for Si1-xGex(0≤x≤ 1) ultralow energy O2+ secondary ion mass spectrometry in the energy range of 0.25-1 keV

(2) Morris, R J H a Dowsett, M G a

a UNIVERSITY OF WARWICK (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ALTERED LAYER; BEAM ENERGIES; ENERGY RANGES; EROSION RATES; EXPONENTIAL DEPENDENCE; GE FRACTION; ION SIGNALS; ION YIELDS; LINEAR RELATIONSHIPS; LOW ENERGIES; MATRIX EFFECTS; NORMAL INCIDENCE; PRIMARY IONS; QUANTITATIVE ANALYSIS; REFERENCE MATERIAL; SECONDARY ION YIELD; SPUTTER YIELDS; ULTRA LOW ENERGY;

ATOMS; EROSION; GERMANIUM; OXYGEN; SECONDARY EMISSION; SECONDARY ION MASS SPECTROMETRY; SILICON;

IONS;

EID: 67649516550 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3139279 Document Type: Article

Times cited : (16)

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