Direct determination of ultrafast intersubband hole relaxation times in voltage biased SiGe quantum wells by a density matrix interpretation of femtosecond resolved photocurrent experiments

New Journal of Physics

Volumn 9, Issue , 2007, Pages

  Rauter, P ^a   Fromherz, T ^a   Vinh, N Q ^b   Murdin, B N ^c   Phillips, J P ^d   Pidgeon, C R ^d   Diehl, L ^e   Dehlinger, G ^e   Grutzmacher D ^e   Zhao, Ming ^f   Ni, Wei Xin ^f   Bauer, G ^a  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^b FOM INSTITUTE FOR PLASMA PHYSICS RIJNHUIZEN   (Netherlands)

^c UNIVERSITY OF SURREY   (United Kingdom)

^d HERIOT WATT UNIVERSITY   (United Kingdom)

^e PAUL SCHERRER INSTITUTE   (Switzerland)

^f LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; HOLE MOBILITY; PHOTOCURRENTS; RELAXATION TIME; SEMICONDUCTING SILICON COMPOUNDS; ULTRAFAST PHENOMENA;

DENSITY MATRIX INTERPRETATION; HOLE RELAXATION; PHONON ENERGY; PHOTOCURRENT SIGNALS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 34249092435     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/9/5/128     Document Type: Article

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