Ballistic quantum simulators for studying variability in nanotransistors

Journal of Computational and Theoretical Nanoscience

Volumn 5, Issue 12, 2008, Pages 2289-2310

  Martinez, Antonio ^a   Barker, John R ^a   Svizhenko, Alexei ^b   Anantram, M P ^c   Bescond, Marc ^d   Asenov, Asen ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b Silvaco Data Systems Inc   (United States)

^c UNIVERSITY OF WATERLOO   (Canada)

^d AIX MARSEILLE UNIVERSITÉ   (France)

Author keywords

Double gate MOSFET; Nanowire MOSFET; Non equilibrium green function; Stray charge; Surface roughness

Indexed keywords

DOPING (ADDITIVES); EVOLUTIONARY ALGORITHMS; FRICTION; FUNCTIONS; GREEN'S FUNCTION; MOSFET DEVICES; NANOWIRES; PROBABILITY DENSITY FUNCTION; SURFACE PROPERTIES; SURFACE ROUGHNESS;

COMPUTATIONAL TIMES; DEVICE SIMULATORS; DISCRETISATION; DOUBLE GATE MOSFET; EFFECTIVE MASSES; INTERFACE ROUGHNESSES; NANOTRANSISTORS; NON EQUILIBRIUM GREEN FUNCTION; QUANTUM SIMULATORS; RECURSIVE ALGORITHMS; STRAY CHARGE;

SIMULATORS;

EID: 58249092808     PISSN: 15461955     EISSN: None     Source Type: Journal    
DOI: 10.1166/jctn.2008.1201     Document Type: Review

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