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Volumn 4, Issue 3, 2005, Pages 355-359

Vorticity and quantum interference in ultra-small SOI MOSFETs

Author keywords

MOSFET; Quantum interference; Silicon on insulator (SOI); Vorticity

Indexed keywords

APPROXIMATION THEORY; ATOMS; BOUNDARY CONDITIONS; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRONS; SILICON; SILICON ON INSULATOR TECHNOLOGY;

EID: 20344379448     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2005.846915     Document Type: Conference Paper
Times cited : (19)

References (6)
  • 1
    • 0001127448 scopus 로고    scopus 로고
    • Fabrication of 2 nm wide silicon quantum wires through a combination of partially-shifted resist pattern and orientation-dependent etching
    • H. Namatsu, K. Kurihara, M. Nagase, and T. Makino, "Fabrication of 2 nm wide silicon quantum wires through a combination of partially-shifted resist pattern and orientation-dependent etching," Appl. Phys. Lett., vol. 70, pp. 619-621, 1997.
    • (1997) Appl. Phys. Lett. , vol.70 , pp. 619-621
    • Namatsu, H.1    Kurihara, K.2    Nagase, M.3    Makino, T.4
  • 2
    • 3142637440 scopus 로고    scopus 로고
    • Efficient quantum 3-D modeling of fully depleted ballistic SOI MOSFETs
    • M. J. Gilbert and D. K. Ferry, "Efficient quantum 3-D modeling of fully depleted ballistic SOI MOSFETs," J. Appl. Phys., vol. 95, pp. 7954-7960, 2003.
    • (2003) J. Appl. Phys. , vol.95 , pp. 7954-7960
    • Gilbert, M.J.1    Ferry, D.K.2
  • 3
    • 3242688783 scopus 로고    scopus 로고
    • Discrete dopant effects in ultra-small fully depleted ballistic SOI MOSFETs
    • _, "Discrete dopant effects in ultra-small fully depleted ballistic SOI MOSFETs," Supperlatt. Microstruct., vol. 34, pp. 277-282, 2003.
    • (2003) Supperlatt. Microstruct. , vol.34 , pp. 277-282
  • 4
    • 0034295786 scopus 로고    scopus 로고
    • Ultrasmall MOSFETs: The importance of the full coulomb interaction on device characteristics
    • Oct.
    • W. J. Gross, D. Vasileska, and D. K. Ferry, "Ultrasmall MOSFETs: The importance of the full coulomb interaction on device characteristics," IEEE Trans. Electron Devices, vol. 47, no. 10, pp. 1831-1837, Oct. 2000.
    • (2000) IEEE Trans. Electron Devices , vol.47 , Issue.10 , pp. 1831-1837
    • Gross, W.J.1    Vasileska, D.2    Ferry, D.K.3
  • 5
    • 0041537563 scopus 로고    scopus 로고
    • Intrinsic fluctuations in sub 10-nm double-gate MOSFET's introduced by discreteness of change and matter
    • Dec.
    • A. R. Brown, A. Asenov, and J. R. Watling, "Intrinsic fluctuations in sub 10-nm double-gate MOSFET's introduced by discreteness of change and matter," IEEE Trans. Nanotechnol., vol. 1, no. 4, pp. 195-200, Dec. 2002.
    • (2002) IEEE Trans. Nanotechnol. , vol.1 , Issue.4 , pp. 195-200
    • Brown, A.R.1    Asenov, A.2    Watling, J.R.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.