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Volumn 2, Issue 3, 2010, Pages 663-668

Effects of hydrogen in working gas on valence states of oxygen in sputter-deposited indium tin oxide thin films

Author keywords

Hydrogen incorporation; ITO thin film; Rutherford backscattering spectroscopy elastic recoil detection analysis; Sputter deposition; X ray photoelectron spectroscopy

Indexed keywords

AS-DEPOSITED FILMS; BAND STRUCTURE CALCULATION; CARRIER DOPING; CONCENTRATION OF; ELASTIC RECOIL DETECTION ANALYSIS; FIRST-PRINCIPLES; HIGH DENSITY; HYDROGEN INCORPORATION; INDIUM TIN OXIDE FILMS; INDIUM TIN OXIDE THIN FILMS; ITO THIN FILM; ITO THIN FILMS; LOW MOBILITY; PLASMA SPUTTER DEPOSITION; SCATTERING CENTERS; VALENCE STATE; WORKING GAS; XPS;

EID: 79151482054     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am9006676     Document Type: Article
Times cited : (18)

References (31)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.