Electrothermal access resistance model for GaN-based HEMTs

IEEE Transactions on Electron Devices

Volumn 58, Issue 2, 2011, Pages 466-472

  Thorsell, Mattias ^a   Andersson, Kristoffer ^a   Hjelmgren, Hans ^a   Rorsman, Niklas ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

Electrothermal effects; gallium nitride (GaN); high electron mobility transistors (HEMTs); nonlinear network analysis; resistance; semiconductor device modeling; thermal resistance

Indexed keywords

ACCESS RESISTANCE; AMBIENT TEMPERATURES; BIAS DEPENDENCE; ELECTRO-THERMAL EFFECTS; ELECTRO-THERMAL MODEL; GAN HEMTS; HIGH POWER DENSITY; LARGE-SIGNALS; RESISTANCE; RF MEASUREMENTS; RF-POWER; SELF-HEATING; SEMICONDUCTOR DEVICE MODELING; SMALL SIGNAL; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT; THERMAL IMPEDANCE; THERMAL RESISTANCE; TIME CONSTANTS; TRANSFER LENGTH METHODS;

DC POWER TRANSMISSION; GALLIUM ALLOYS; GALLIUM NITRIDE; HEATING; NONLINEAR NETWORK ANALYSIS; NONLINEAR NETWORKS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR SWITCHES; TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79151480445     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2093012     Document Type: Article

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