Thermal study of the high-frequency noise in GaN HEMTs

IEEE Transactions on Microwave Theory and Techniques

Volumn 57, Issue 1, 2009, Pages 19-26

  Thorsell, Mattias ^a   Andersson, Kristoffer ^a   Fagerlind, Martin ^a   Südow, Mattias ^a   Nilsson, Per Åke ^a   Rorsman, Niklas ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

Gallium nitride (GaN); Modeling; Noise; Temperature measurement; Thermal resistance

Indexed keywords

ACCESS RESISTANCE; DISSIPATED POWER; GAN HEMTS; HIGH-FREQUENCY NOISE; INFRARED MICROSCOPY; LIMITING EFFECTS; MODELING; NOISE; NOISE MODELS; NOISE PERFORMANCE; SELF-HEATING; SELF-HEATING EFFECT; SMALL SIGNAL; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT; THERMAL RESISTANCE; THERMAL STUDY;

GALLIUM NITRIDE; HEATING; PARAMETER EXTRACTION; TEMPERATURE MEASUREMENT;

GALLIUM ALLOYS;

EID: 70449356163     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2008.2009084     Document Type: Conference Paper

References (24)

1. U. Mishra, S. Likun, T. Kazior, and Y.-F. Wu, "GaN-based RF power devices and amplifiers," Proc. IEEE, vol. 96, no. 2, pp. 287-305, Feb. 2008.
2. Y.-F.Wu,M.Moore, A. Saxler, T.Wisleder, and P. Parikh, "40-W/mm double field-plated GaN HEMTs," in 64th Device Res. Conf., Jun. 2006, pp. 151-152.
3. M.-Y. Kao, C. Lee, R. Hajji, P. Saunier, and H.-Q. Tserng, "AlGaN/GaN HEMTs with PAE of 53% at 35 GHz for HPA and multi-function MMIC applications," in IEEE MTT-S Int. Microw. Symp. Dig., Jun. 3-8, 2007, pp. 627-629.
4. M. Micovic, A. Kurdoghlian, T. Lee, R. Hiramoto, P. Hashimoto, A. Schmitz, I. Milosavljevic, P. Willadsen, W.-S. Wong, M. Antcliffe, M. Wetzel, M. Hu, M. Delaney, and D. Chow, "Robust broadband (4 GHz-16 GHz) GaN MMIC LNA," in IEEE Compound Semiconduct. Integr. Circuits Symp., Oct. 14-17, 2007, pp. 1-4.
5. M. Rudolph, R. Behtash, R. Doerner, K. Hirche, J.Wurfl, W. Heinrich, and G. Trankle, "Analysis of the survivability of GaN low-noise amplifiers," IEEE Trans. Microw. Theory Tech., vol. 55, no. 1, pp. 37-43, Jan. 2007.
6. P. Schuh, R. Leberer, H. Sledzik, D. Schmidt, M. Oppermann, B. Adelseck, H. Brugger, R. Quay, F. van Raay, M. Seelmann-Eggebert, R. Kiefer, and W. Bronner, "Linear broadband GaN MMICs for K u-band applications," in IEEE MTT-S Int. Microw. Symp. Dig., Jun. 11-16, 2006, pp. 1324-1326.
7. S. Nuttinck, E. Gebara, J. Laskar, and M. Harris, "High-frequency noise in AlGaN/GaN HFETs," IEEE Microw. Wireless Compon. Lett., vol. 13, no. 4, pp. 149-151, Apr. 2003.
8. S. Nuttinck, B. Wagner, B. Banerjee, S. Venkataraman, E. Gebara, J. Laskar, and H. Harris, "Thermal analysis of AlGaN-GaN power HFETs," IEEE Trans. Microw. Theory Tech., vol. 51, no. 12, pp. 2445-2452, Dec. 2003.
9. Nidhi, T. Palacios, A. Chakraborty, S. Keller, and U. Mishra, "Study of impact of access resistance on high-frequency performance of AlGaN/GaN HEMTs by measurements at low temperatures," IEEE Electron Device Lett., vol. 27, no. 11, pp. 877-880, Nov. 2006.
10. M. Thorsell, K. Andersson, M. Fagerlind, M. Südow, P.-Å. Nilsson, and N. Rorsman, "Thermal characterization of the intrinsic noise parameters for AlGaN/GaN HEMTs," in IEEE MTT-S Int. . Symp. Dig., Jun. 15-20, 2008, pp. 463-466.
11. M. Südow, M. Fagerlind, M. Thorsell, K. Andersson, N. Billström, P.-Å. Nilsson, and N. Rorsman, "An AlGaN/GaN HEMT based microstrip MMIC process for advanced transceiver design," IEEE Trans. Microw. Theory Tech., vol. 56, no. 8, pp. 1827-1833, Aug. 2008.
12. R. Simms, J. Pomeroy, M. Uren, T. Martin, and M. Kuball, "Channel temperature determination in high-power AlGaN/GaN HFETs using electrical methods and raman spectroscopy," IEEE Trans. Electron Devices, vol. 55, no. 2, pp. 478-482, Feb. 2008.
13. W. Tan, M. Uren, P. Fry, P. Houston, R. Balmer, and T. Martin, "High temperature performance of AlGaN/GaN HEMTs on Si substrates," Solid State Electron., vol. 50, no. 3, pp. 511-513, Mar. 2006.
14. C. Sanabria, A. Chakraborty, H. Xu, M. Rodwell, U. Mishra, and R. York, "The effect of gate leakage on the noise figure of AlGaN/GaN HEMTs," IEEE Electron Device Lett., vol. 27, no. 1, pp. 19-21, Jan. 2006.
15. V. Adamian, "2-26.5 GHz on-wafer noise and S-parameter measurements using a solid state tuner," Maury Microw. Corporation, Ontario, CA, Aplicat. Note 5C-051, Mar. 2003.
16. G. Dambrine, A. Cappy, F. Heliodore, and E. Playez, "A new method for determining the FET small-signal equivalent circuit," IEEE Trans. Microw. Theory Tech., vol. 36, no. 7, pp. 1151-1159, Jul. 1988.
17. J. Kuzmik, R. Javorka, A. Alam, M. Marso, M. Heuken, and P. Kordos, "Determination of channel temperature in AlGaN/GaN HEMTs grown on sapphire and silicon substrates using DC characterization method," IEEE Trans. Electron Devices, vol. 49, no. 8, pp. 1496-1498, Aug. 2002.
18. N. Rorsman, M. Garcia, C. Karlsson, and H. Zirath, "Accurate smallsignal modeling of HFET's for millimeter-wave applications," IEEE Trans. Microw. Theory Tech., vol. 44, no. 3, pp. 432-437, Mar. 1996.
19. R. F. Pierret, Advanced Semiconductor Fundamentals. Upper Saddle River, NJ: Pearson Educ., 2003.
20. C. Oxley, M. Uren, A. Coates, and D. Hayes, "On the temperature and carrier density dependence of electron saturation velocity in an AlGaN/GaN HEMT," IEEE Trans. Electron Devices, vol. 53, no. 3, pp. 565-567, Mar. 2006.
21. I. Daumiller, C. Kirchner,M. Kamp, K. Ebeling, and E.Kohn, "Evaluation of the temperature stability of AlGaN/GaN heterostructure FETs," IEEE Trans. Electron Device Lett., vol. 20, no. 9, pp. 448-450, Sep. 1999.
22. R. Pucel, W. Struble, R. Hallgren, and U. Rohde, "A general noise de-embedding procedure for packaged two-port linear active devices," IEEE Trans. Microw. Theory Tech., vol. 40, no. 11, pp. 2013-2024, Nov. 1992.
23. H. Hillbrand and P. Russer, "An efficient method for computer aided noise analysis of linear amplifier networks," IEEE Trans. Circuits Syst., vol. CAS-23, no. 4, pp. 235-238, Apr. 1976.
24. R. A. Pucel, H. Statz, and H. A. Haus, "Signal and noise properties of gallium arsenide microwave field-effect transistors," in Advances in Electronics and Electron Physics. New York: Academic, 1975, vol. 38, pp. 195-265.