A general procedure for extraction of bias dependent dynamic self heating model parameters

IEEE MTT-S International Microwave Symposium Digest

Volumn 2005, Issue , 2005, Pages 1159-1162

  Andersson, Kristoffer ^a   Fager, Christian ^a   Pedro, José Carlos ^b  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b INSTITUTO DE TELECOMUNICAÇÕES   (Portugal)

Author keywords

Electrothermal effects; Semiconductor device modeling

Indexed keywords

ELECTROTHERMAL INTERACTION; PARAMETER EXTRACTION TECHNIQUE; SMALL-SIGNAL ANALYSIS; THERMAL IMPEDANCE;

ELECTRIC IMPEDANCE; HEAT TREATMENT; NUMERICAL METHODS; SEMICONDUCTOR DEVICE MODELS; SIGNAL PROCESSING;

ELECTRODYNAMICS;

EID: 33749245903     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2005.1516881     Document Type: Conference Paper

References (11)

1. (2004, October) High Frequency Transistor Primer, Part III Thermal Properties. Agilent Technologies. [Online]. Available: http://cp.literature.agilent.com/litweb/pdf/5966-3084E.pdf
2. Y.Zhu, et al., "Analytical model for electrical and thermal transients of self-heating semiconductor devices," IEEE Transactions on Microwave Theory and Techniques, vol. 46, no. 12, pp. 2258-2263, 1998.
3. A. L.Caviglia et al., "Linear dynamic self-heating in SOI MOFETs," IEEE Electron Device Letters, vol. 14, no. 3, pp. 133-135, 1993.
4. L.Codecasa, et al., "Modeling of Thermal Response of Semiconductor Devices Through Equivalent Electrical Networks," IEEE Transactions on Circuits and Systems, vol. 49, no. 8, pp. 1187-1197, 2002.
5. A. E.Parker et al., "Contribution of self heating to intermodulation in FETs," in IEEE MTT-S International Microwave Symposium, Fort Worth, Texas, USA, 2004.
6. D.Estreich, "A DC technique for determining GaAs MESFET thermal resistance," Components, Hybrids, and Manufacturing Technology, IEEE Transactions on, vol. 12, no. 4, pp. 675-679, 1989.
7. B.Tenbroek, et al., "Self-heating effects in SOI MOSFETs and their measurement by small signal conductance techniques," Electron Devices, IEEE Transactions on, vol. 43, no. 12, pp. 2240-2248, 1996.
8. P.McIntosh et al., "Measurement of heterojunction bipolar transistor thermal resistance based on a pulsed I-V system," Electronics Letters, vol. 33, no. 1, pp. 100-101, 1997.
9. N.Bovolon, et al., "A simple method for the thermal resistance measurement of AlGaAs/GaAs heterojunction bipolar transistors," Electron Devices, IEEE Transactions on, vol. 45, no. 8, pp. 1846-1848, 1998.
10. D.Dawson, et al., "CW measurement of HBT thermal resistance," Electron Devices, IEEE Transactions on, vol. 39, no. 10, pp. 2235-2239, 1992.
11. K.Jenkins et al., "Measurement of the effect of self-heating in strained-silicon MOSFETs," IEEE Electron Device Letters, vol. 23, no. 6, pp. 360-362, 2002.