Development and analysis of low resistance ohmic contact to n-AlGaN/GaN HEMT

Diamond and Related Materials

Volumn 16, Issue 2, 2007, Pages 262-266

  Soltani, A ^a   BenMoussa, A ^b   Touati, S ^a   Hoel V ^a   De Jaeger, J C ^a   Laureyns, J ^c   Cordier, Y ^d   Marhic, C ^e   Djouadi, M A ^e   Dua, C ^f  

^a INSTITUT D ELECTRONIQUE   (France)

^b ROB   (Belgium)

^c UNIVERSITÉ DES SCIENCES ET TECHNOLOGIES DE LILLE   (France)

^d CRHEA CNRS   (France)

^e INSTITUT DES MATÉRIAUX JEAN ROUXEL   (France)

^f NOKIA RESEARCH CENTER   (United States)

Author keywords

GaN; HEMT; MicroRaman; Ohmic contact

Indexed keywords

ELECTRIC RESISTANCE; ELECTRON GAS; GALLIUM NITRIDE; METALLIZING; MOLECULAR BEAM EPITAXY; OHMIC CONTACTS; RAMAN SPECTROSCOPY; RAPID THERMAL ANNEALING;

MICRORAMAN SPECTROSCOPY; NONLINEARITY; SPACING; TRANSMISSION LINE MODEL (TLM);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33846434799     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2006.06.022     Document Type: Article

References (13)

1. Moon J., Micovic M., Kurdoghlian A., Hashimoto P., Wong W., McCray L., and Nguyen C. IEEE Electron Device Letters 23 11 (2002) 637
2. Fan Z., Mohammad S.-N., Kim W., Aktas O., Botchkarev A.-E., and Morkoc H. Applied Physics Letters 68 12 (1996) 1672
3. Qiao D., Guan Z.F., Carlton J., and Lau S.S. Applied Physics Letters 74 18 (1999) 2652
4. Selvathan D., Zhou L., Kumar V., Adesida I., and Finnegan N. Journal of Electronic Materials 32 5 (2003) 335
5. A.N. Bright, P.J. Thomas, M. Weyland, D.M. Tricker, C.J. Humphreys, R. Davies, Correlation of contact resistance with microstructure for Au/Ni/Al/Ti//AlGaN/GaN ohmic contacts using transmission electron microscopy, Journal of Applied Physics 89 (6) 3143.
6. Semond F., Cordier Y., Semond F., Cordier Y., Grandjean N., Natali F., Damilano B., Vezian S., and Massies J. Physica Status Solidi. A, Applied Research 188 2 (2001) 501
7. di Forte-Poisson M.-A., Magis M., Tordjman M., Aubry R., Peschang M., Delage S.L., di Persio J., Grimbert B., Hoël V., Delos E., Ducatteau D., and Gaquière C. Proceedings of MRS Fall Meeting, Boston (2003)
8. Berger H. Solid-State Electronics 15 (1972) 145
9. Li Y., Barry Harrison H., and Reeves G.K. Microelectronics Journal 29 (1998) 21
10. Tripathy S., Chua S.J., Chen P., and Miao Z.L. Journal of Applied Physics 92 7 (2002) 3503
11. Kuball M., Hayes J.M., Uren M.J., Martin I., Birbeck J.C.H., Balmer R.S., and Hughes B.T. IEEE Electron Device Letters 23 1 (2002) 7
12. Liu M.S., Tong Y.Z., Bursill L.A., Prawer S., Nugent K.W., and Zhang G.Y. Solid State Communications 108 10 (1998) 765
13. Kang B.S., Kim S., Kim J., Ren F., Baik K., Pearton S.J., Gila B.P., Abernathy C.R., Pan C.-C., Chen G.-T., Chyi J.-I., Chandrasekaran V., Sheplak M., Nishida T., and Chu S.N.G. Applied Physics Letters 83 23 (2003) 4845