Electrical characteristics of nickel silicide-silicon heterojunction in suspended silicon nanowires

Solid-State Electronics

Volumn 56, Issue 1, 2011, Pages 130-134

  Hong, Su Heon ^a   Kang, Myung Gil ^a   Kim, Byung Sung ^a,b   Kim, Duk Soo ^a   Ahn, Jae Hyun ^a   Whang, Dongmok ^a,b   Sull, Sang Hoon ^a   Hwang, Sung Woo ^a  

^a Korea University   (South Korea)

^b Sungkyunkwan University   (South Korea)

Author keywords

Electron transport; Silicide silicon heterojunction; Silicon nanowire

Indexed keywords

ANNEALING TIME; AXIAL DIRECTION; ELECTRICAL CHARACTERISTIC; ELECTRON TRANSPORT; ELECTRONIC CHARACTERISTICS; IV CHARACTERISTICS; NI ATOMS; NICKEL SILICIDE; SCHOTTKY BARRIERS; SILICIDATION; SILICON HETEROJUNCTIONS; SILICON NANOWIRE; SILICON NANOWIRES; STEP-BY-STEP; THERMAL-ANNEALING;

ANNEALING; CRYSTAL ATOMIC STRUCTURE; ELECTRIC WIRE; ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; HETEROJUNCTIONS; NANOWIRES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; SILICIDES;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 78751643908     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2010.11.012     Document Type: Article

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