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Journal of Electronic Materials

Volumn 39, Issue 4, 2010, Pages 365-370

Surface diffusion controlled formation of nickel silicides in silicon nanowires

(4) Katsman, A a Yaish, Y a Rabkin, E a Beregovsky, M a

a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY (Israel)

Author keywords

Field effect transistor; Nickel silicide silicon contacts; Semiconducting nanowires; Surface and interface diffusion

Indexed keywords

ANNEALING TIME; CONTINUOUS LAYERS; DIFFUSION COEFFICIENTS; DIFFUSIVITIES; DIMENSIONLESS PARAMETERS; ELECTRONIC APPLICATION; IN-FIELD; INTERFACE DIFFUSION; LONGITUDINAL GROWTH; NICKEL SILICIDE; PHASE FORMATIONS; QUASI-STATIONARY APPROXIMATIONS; SEMICONDUCTING NANOWIRES; SILICON NANOWIRES; SINGLE-CRYSTALLINE; SURFACE AND INTERFACES; SURFACE LAYERS; THERMALLY ACTIVATED; VOLUME DIFFUSION; VOLUME DIFFUSION COEFFICIENTS;

DIFFUSION IN SOLIDS; FIELD EFFECT TRANSISTORS; GROWTH KINETICS; LONGITUDINAL CONTROL; MESFET DEVICES; NANOWIRES; NICKEL; NICKEL ALLOYS; NICKEL COMPOUNDS; PHASE INTERFACES; SEMICONDUCTOR GROWTH; SILICIDES; SURFACE DIFFUSION; SURFACE REACTIONS;

PROCESS CONTROL;

EID: 77951021929 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-009-1071-1 Document Type: Article

Times cited : (26)

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