Orientation dependence of nickel silicide formation in contacts to silicon nanowires

Journal of Applied Physics

Volumn 105, Issue 9, 2009, Pages

  Dellas, N S ^a   Liu, B Z ^a   Eichfeld, S M ^a   Eichfeld, C M ^a   Mayer, T S ^a,b   Mohney, S E ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b The Pennsylvania State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING CONDITION; EPITAXIAL ORIENTATIONS; GROWTH DIRECTIONS; GROWTH FRONT; LATTICE MATCHING; NI FILMS; NI SILICIDE; NICKEL SILICIDE; ORIENTATION DEPENDENCE; SI (1 1 1); SI(1 0 0); SI(112); SILICIDATION; SILICON NANOWIRES;

ELECTRIC WIRE; EPITAXIAL FILMS; EPITAXIAL GROWTH; NANOWIRES; NICKEL; NICKEL COMPOUNDS; SILICIDES; SILICON;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 67249092392     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3115453     Document Type: Article

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