Interfaces and traps in pentacene field-effect transistor

Journal of Applied Physics

Volumn 108, Issue 11, 2010, Pages

  Sangeeth, C S Suchand ^a   Stadler, P ^b   Schaur, S ^b   Sariciftci, N S ^b   Menon, Reghu ^a  

^a INDIAN INSTITUTE OF SCIENCE   (India)

^b JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

AC IMPEDANCE MEASUREMENT; BODE PLOTS; CHANNEL IMPEDANCE; CHARGE ACCUMULATION; CHARGE CARRIER TRAPPING; CONTACT IMPEDANCE; DIELECTRIC-SEMICONDUCTOR INTERFACES; EQUIVALENT CIRCUIT PARAMETER; LIGHT ILLUMINATION; LOW FREQUENCY; LOW-FREQUENCY IMPEDANCE; ORGANIC SEMICONDUCTOR; PENTACENES; PHOTOCONDUCTIVE EFFECT; PHOTOGENERATED CARRIERS; SOURCE-DRAIN; SOURCE-DRAIN ELECTRODES;

ELECTRIC IMPEDANCE MEASUREMENT; FIELD EFFECT TRANSISTORS; PHOTOVOLTAIC EFFECTS; SEMICONDUCTING ORGANIC COMPOUNDS;

ORGANIC FIELD EFFECT TRANSISTORS;

EID: 78751536438     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3517085     Document Type: Article

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