메뉴 건너뛰기




Volumn 95, Issue 9, 2009, Pages

Photoimpedance characterization of polymer field-effect transistor

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE ACCUMULATION; DC BIAS; EQUIVALENT CIRCUIT PARAMETER; LOW FREQUENCY; METAL SEMICONDUCTOR INTERFACE; MONOCHROMATIC LIGHT; PHOTOPHYSICAL PHENOMENA; POLYMER FIELD EFFECT TRANSISTORS; SIMULATED RESPONSE; SMALL-SIGNAL AC RESPONSE; SOURCE-DRAIN;

EID: 69949178259     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3222978     Document Type: Article
Times cited : (12)

References (14)
  • 1
    • 0032021761 scopus 로고    scopus 로고
    • 0935-9648,. 10.1002/(SICI)1521-4095(199803)10:5<365::AID-ADMA365>3. 0.CO;2-U
    • G. Horowitz, Adv. Mater. (Weinheim, Ger.) 0935-9648 10, 365 (1998). 10.1002/(SICI)1521-4095(199803)10:5<365::AID-ADMA365>3.0.CO;2-U
    • (1998) Adv. Mater. (Weinheim, Ger.) , vol.10 , pp. 365
    • Horowitz, G.1
  • 2
  • 3
    • 27144540626 scopus 로고    scopus 로고
    • Device physics of solution-processed organic field-effect transistors
    • DOI 10.1002/adma.200501152
    • H. Sirringhaus, Adv. Mater. (Weinheim, Ger.) 0935-9648 17, 2411 (2005). 10.1002/adma.200501152 (Pubitemid 41504967)
    • (2005) Advanced Materials , vol.17 , Issue.20 , pp. 2411-2425
    • Sirringhaus, H.1
  • 5
    • 0035903363 scopus 로고    scopus 로고
    • 0003-6951,. 10.1063/1.1404131
    • K. S. Narayan and N. Kumar, Appl. Phys. Lett. 0003-6951 79, 1891 (2001). 10.1063/1.1404131
    • (2001) Appl. Phys. Lett. , vol.79 , pp. 1891
    • Narayan, K.S.1    Kumar, N.2
  • 6
    • 13644276620 scopus 로고    scopus 로고
    • High-photosensitivity p-channel organic phototransistors based on a biphenyl end-capped fused bithiophene oligomer
    • DOI 10.1063/1.1856144, 043501
    • Y. -Y. Noh, D. -Y. Kim, Y. Yoshida, K. Yase, B. -J. Jung, E. Lim, and H. -K. Shim, Appl. Phys. Lett. 0003-6951 86, 043501 (2005). 10.1063/1.1856144 (Pubitemid 40232205)
    • (2005) Applied Physics Letters , vol.86 , Issue.4 , pp. 0435011-0435013
    • Noh, Y.-Y.1    Kim, D.-Y.2    Yoshida, Y.3    Yase, K.4    Jung, B.-J.5    Lim, E.6    Shim, H.-K.7
  • 7
    • 0001115041 scopus 로고    scopus 로고
    • Potentiometry of an operating organic semiconductor field-effect transistor
    • DOI 10.1063/1.1345805
    • K. Seshadri and C. D. Frisbie, Appl. Phys. Lett. 0003-6951 78, 993 (2001). 10.1063/1.1345805 (Pubitemid 33662086)
    • (2001) Applied Physics Letters , vol.78 , Issue.7 , pp. 993-995
    • Seshadri, K.1    Frisbie, C.D.2
  • 8
    • 33645500044 scopus 로고    scopus 로고
    • 0003-6951,. 10.1063/1.2186989
    • M. Jaiswal and R. Menon, Appl. Phys. Lett. 0003-6951 88, 123504 (2006). 10.1063/1.2186989
    • (2006) Appl. Phys. Lett. , vol.88 , pp. 123504
    • Jaiswal, M.1    Menon, R.2
  • 9
    • 34548478311 scopus 로고    scopus 로고
    • Correlation between bias stress instability and phototransistor operation of pentacene thin-film transistors
    • DOI 10.1063/1.2777177
    • M. Debucquoy, S. Verlaak, S. Steudel, K. Myny, J. Genoe, and P. Heremans, Appl. Phys. Lett. 0003-6951 91, 103508 (2007). 10.1063/1.2777177 (Pubitemid 47379079)
    • (2007) Applied Physics Letters , vol.91 , Issue.10 , pp. 103508
    • Debucquoy, M.1    Verlaak, S.2    Steudel, S.3    Myny, K.4    Genoe, J.5    Heremans, P.6
  • 14
    • 0033331585 scopus 로고    scopus 로고
    • Characteristics of InAlAs/InGaAs high-electron-mobility transistors under illumination with modulated light
    • DOI 10.1109/16.808049
    • Y. Takanashi, K. Takahata, and Y. Muramoto, IEEE Trans. Electron Devices 0018-9383 46, 2271 (1999). 10.1109/16.808049 (Pubitemid 30540697)
    • (1999) IEEE Transactions on Electron Devices , vol.46 , Issue.12 , pp. 2271-2277
    • Takanashi, Y.1    Takahata, K.2    Muramoto, Y.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.