Effect of light irradiation on the characteristics of organic field-effect transistors

Journal of Applied Physics

Volumn 100, Issue 9, 2006, Pages

  Noh, Yong Young ^a,c   Ghim, Jieun ^a   Kang, Seok Ju ^a   Baeg, Kang Jun ^a   Kim, Dong Yu ^a   Yase, Kiyoshi ^b  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; LIGHT SCATTERING; PHOTOCONDUCTIVITY; PHOTOTRANSISTORS; PHOTOVOLTAIC EFFECTS;

LIGHT IRRADIATION; ORGANIC FIELD EFFECT TRANSISTORS; ORGANIC PHOTOTRANSISTORS (OPT); PENTACENE;

GATES (TRANSISTOR);

EID: 33751096704     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2364449     Document Type: Article

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