Improved reverse blocking characteristics in AlGaN/GaN Schottky barrier diodes based on AlN template

Electronics Letters

Volumn 43, Issue 17, 2007, Pages 953-954

  Miyoshi, M ^a   Kuraoka, Y ^a   Asai, K ^a   Shibata, T ^a   Tanaka, M ^a   Egawa, T ^b  

^a NGK INSULATORS LTD   (Japan)

^b NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM NITRIDE; ANODES; BLOCKING PROBABILITY; CRYSTALS; SAPPHIRE;

ANODE-TO-CATHODE SPACING; CRYSTAL QUALITY; REVERSE-BLOCKING;

SCHOTTKY BARRIER DIODES;

EID: 34548023634     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20071141     Document Type: Article

References (11)

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