Unlimited high breakdown voltage by natural super junction of polarized semiconductor

IEEE Electron Device Letters

Volumn 29, Issue 10, 2008, Pages 1087-1089

  Ishida, Hidetoshi ^a   Shibata, Daisuke ^a   Yanagihara, Manabu ^a   Uemoto, Yasuhiro ^a   Matsuo, Hisayoshi ^a   Ueda, Tetsuzo ^a   Tanaka, Tsuyoshi ^a   Ueda, Daisuke ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

Breakdown voltage; GaN; Heterojunction fieldeffect transistor (HFET); Piezoelectric; Polarization; Schottky barrier diode (SBD); Simulation; Super junction

Indexed keywords

EID: 54749158142     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2002753     Document Type: Article

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