On the temperature-dependent characteristics of metamorphic heterostructure field-effect transistors with different Schottky gate metals

Semiconductor Science and Technology

Volumn 22, Issue 5, 2007, Pages 475-480

  Lai, Po Hsien ^a   Fu, Ssu I ^a   Hung, Ching Wen ^a   Tsai, Yan Ying ^a   Chen, Tzu Pin ^a   Chen, Chun Wei ^a   Huang, Yi Wen ^a   Liu, Wen Chau ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; GATE DIELECTRICS; HETEROJUNCTIONS; IMPACT IONIZATION; MESFET DEVICES; MICROWAVES; SEMICONDUCTING INDIUM COMPOUNDS;

IMPACT IONIZATION EFFECTS; METAMORPHIC HETEROSTRUCTURE FIELD EFFECT TRANSISTORS (MHFET); MICROWAVE PROPERTIES; SCHOTTKY GATE ALLOYS; SCHOTTKY GATE METALS;

GATES (TRANSISTOR);

EID: 34247533720     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/5/004     Document Type: Article

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