Gate-metal formation-related kink effect and gate current on in 0.5Al0.5As/In0.5Ga0.5As metamorphic high electron mobility transistor performance

Applied Physics Letters

Volumn 89, Issue 3, 2006, Pages

  Hsu, M K ^a   Chen, H R ^b   Chiou, S Y ^a   Chen, W T ^a   Chen, G H ^a   Chang, Y C ^a   Lour, W S ^a  

^a NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

^b NATIONAL UNIVERSITY OF KAOHSIUNG   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC CURRENTS; ELECTRON MOBILITY; GATES (TRANSISTOR); INDIUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

GATE CURRENTS; GATE FEEDER METALS; KINK EFFECTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33746305017     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2222259     Document Type: Article

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