InAlAs/InGaAs doped channel heterostructure for high-linearity, high-temperature and high-breakdown operations

Solid-State Electronics

Volumn 49, Issue 2, 2005, Pages 163-166

  Chen, Yeong Jia ^a   Hsu, Wei Chou ^a   Chen, Yen Wei ^a   Lin, Yu Shyan ^b   Hsu, Rong Tay ^c   Wu, Yue Huei ^c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL DONG HWA UNIVERSITY   (Taiwan)

^c Land Mark Optoelectronics Corporation   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH ELECTRON MOBILITY TRANSISTORS; HIGH TEMPERATURE OPERATIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLITHOGRAPHY; RAPID THERMAL ANNEALING; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; THRESHOLD VOLTAGE;

GATE VOLTAGE; INALAS/INGAAS HETEROSTRUCTURES; INP BASED HEMT; LP-MOCVD;

HETEROJUNCTIONS;

EID: 9544243710     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.08.003     Document Type: Article

References (9)

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