AlGaN/GaN epitaxy and technology

International Journal of Microwave and Wireless Technologies

Volumn 2, Issue 1, 2010, Pages 3-11

  Waltereit, Patrick ^a   Bronner, Wolfgang ^a   Quay, Rüdiger ^a   Dammann, Michael ^a   Kiefer, Rudolf ^a   Pletschen, Wilfried ^a   Mller, Stefan ^a   Aidam, Rolf ^a   Menner, Hanspeter ^a   Kirste, Lutz ^a   Khler, Klaus ^a   Mikulla, Michael ^a   Ambacher, Oliver ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

HEMT; Homogeneity; MMIC; PAE; Reliability; Reproducibility

Indexed keywords

ALGAN/GAN; BASE STATION APPLICATIONS; DEVICE PERFORMANCE; GAN HIGH ELECTRON MOBILITY TRANSISTORS; GATE LENGTH; GATE WIDTHS; HIGH POWER PERFORMANCE; HIGH-VOLTAGES; HIGHER FREQUENCIES; HOMOGENEITY; LINEAR GAIN; OUTPUT POWER; OUTPUT POWER DENSITY; POWER-ADDED EFFICIENCY; PROCESSING TECHNOLOGIES; REPRODUCIBILITIES; RF CONVERSION; RF STRESS; SIC SUBSTRATES; SUPPLY VOLTAGES;

CONVERSION EFFICIENCY; CRYSTAL GROWTH; DC POWER TRANSMISSION; DRAIN CURRENT; ELECTRON MOBILITY; GALLIUM NITRIDE; RELIABILITY; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 78651529566     PISSN: 17590787     EISSN: 17590795     Source Type: Journal    
DOI: 10.1017/S175907871000005X     Document Type: Article

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