X-band T/R-module front-end based on GaN MMICs

International Journal of Microwave and Wireless Technologies

Volumn 1, Issue 4, 2009, Pages 387-394

  Schuh, Patrick ^a   Sledzik, Hardy ^a   Reber, Rolf ^a   Fleckenstein, Andreas ^a   Leberer, Ralf ^a   Oppermann, Martin ^a   Quay, Rüdiger ^b   Van Raay, Friedbert ^b   Seelmann Eggebert, Matthias ^b   Kiefer, Rudolf ^b   Mikulla, Michael ^b  

^a AIRBUS GROUP INNOVATIONS   (Germany)

^b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

AlGaN GaN; MMICs; T R module; X band

Indexed keywords

ACTIVE ARRAYS; ALGAN/GAN; CHEMICAL MATERIALS; DRIVER AMPLIFIER; HIGH-POWER AMPLIFIERS; LOW NOISE; LOW TEMPERATURE CO-FIRED CERAMICS; MICROSTRIP TECHNOLOGY; MONOLITHICALLY INTEGRATED; OUTPUT POWER LEVELS; T/R MODULES; VIA-HOLE; X-BAND FREQUENCIES;

AUDIO FREQUENCY AMPLIFIERS; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; LOW NOISE AMPLIFIERS; MICROWAVE CIRCUITS; POWER AMPLIFIERS;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 78649613431     PISSN: 17590787     EISSN: 17590795     Source Type: Journal    
DOI: 10.1017/S1759078709990389     Document Type: Conference Paper

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