A highly uniform and reliable AlGaN/GaN HEMT

2005 International Conference on Compound Semiconductor Manufacturing Technology

Volumn , Issue , 2005, Pages

  Nikaido, Junichiro ^a   Kikkawa, Toshihide ^b   Yokokawa, Shigeru ^a   Tateno, Yasunori ^a  

^a Sumitomo Electric Device Innovations USA   (Japan)

^b FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Base station; Current collapse free; GaN; HEMT

Indexed keywords

ALGAN/GAN HEMTS; CURRENT-COLLAPSE-FREE; GAN; HIGH ELECTRON MOBILITY TRANSISTOR (HEMT); MICROWAVE APPLICATIONS; SIC SUBSTRATES; STANDARD DEVIATION; STRESS TEST;

BASE STATIONS; GALLIUM NITRIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE; SILICON NITRIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84887400085     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. W.L.Pribble, J.W.Palmour, S.T.Sheppard, R.P.Smith, S.T.Alen, T.J.Smith, Z.Ring, J.J.Sumakeris, A.W.Saxler, and J.W.Milligan, 2002 MTT-S Digest, pp1819-1822, June 2002.
2. Y.Okamoto, Y.Ando, H.Miyamoto, T.Nakayama, T.Inoue and M.Kuzuhara, 2003 MTT-s Tech. Digest, pp225-228, June 2003.
3. T.Kikkawa et al., 2001 IEDM Tech. Digest, pp585-588, December 2001.
4. M.Nagahara, T.Kikkawa, N.Adachi, Y.Tateno, S.Kato, M.Yokoyama, S.Yokogawa, T.Kimura, Y.Yamaguchi, N.Hara, and K.Joshin, "2002 IEDM Tech. Digest, December 2002.
5. T.Kikkawa, M.Nagahara, N.Adachi, S.Yokokawa, S.Kato, M.Yokoyama, M.Kanamura, N.Hara, and K.Joshin, 2003 RF-IC Digest, pp167-170, June 2002.
6. K.Joshin et al., 2003 IEDM Tech Digest, pp983-985, December 2002.
7. M.Kanamura et al., Extended abstracts of 2003 Solid State Devices and Materials, pp.916-917, September 2003.
8. T.Kikkawa ISCS-2004 Extended Abstracts, p136, September 2004.