GaN HEMT and MMIC development at Fraunhofer IAF: Performance and reliability

Physica Status Solidi (A) Applications and Materials Science

Volumn 206, Issue 6, 2009, Pages 1215-1220

  Waltereit, P ^a   Bronner, W ^a   Quay, R ^a   Dammann, M ^a   Kiefer, R ^a   Muller S ^a   Musser, M ^a   Kuhn J ^a   Van Raay, F ^a   Seelmann, M ^a   Mikulla, M ^a   Ambacher, O ^a   Van Rijs, F ^b   Rodle T ^b   Riepe, K ^c  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^b NXP SEMICONDUCTORS   (Netherlands)

^c United Monolithic Semiconductors GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HEMT; BREAKDOWN VOLTAGE; CERAMIC PACKAGE; DEVICE FABRICATIONS; DEVICE PERFORMANCE; DRAIN BIAS; DUAL STAGE; EPITAXIAL STRUCTURE; FRAUNHOFER; GAN HEMT; GAN HEMTS; GATE DRAIN; GATE LENGTH; GATE PERIPHERY; GATE WIDTHS; HIGH POWER PERFORMANCE; HIGH-VOLTAGE; LARGE POWER; LINEAR GAIN; LOAD-PULL MEASUREMENT; LOW BACKGROUND; MICROSTRIP TRANSMISSION LINES; OUTPUT POWER; OUTPUT POWER DENSITY; PINCHOFF; POWER LEVELS; POWER-ADDED EFFICIENCY; PROCESSING TECHNIQUE; PROCESSING TECHNOLOGIES; RF DISPERSION; RF STRESS; SIC SUBSTRATES; SINGLE STAGE; STEPPER LITHOGRAPHY; SYSTEMATIC STUDY; TRAP DENSITY;

BANDPASS FILTERS; CARRIER CONCENTRATION; CRYSTAL GROWTH; DIELECTRIC RELAXATION; DRAIN CURRENT; ELECTRIC CONDUCTIVITY; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; IONIZATION OF GASES; MICROWAVE CIRCUITS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; RELIABILITY; SEMICONDUCTING GALLIUM; SILICON CARBIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 67649993962     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200880774     Document Type: Article

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